NTDN/D. NTDN, NVDN. Power MOSFET. 30 V, 54 A, Single N− Channel, DPAK/IPAK. Features. • Low RDS(on) to Minimize Conduction Losses. SIDY Transistor Datasheet, SIDY Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. AOC Transistor Datasheet, AOC Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.
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RoHS Certificate of Compliance. Maximum Gate Threshold Voltage.
SIDY MOSFET Datasheet pdf – Equivalent. Cross Reference Search
Minimum Gate Threshold Voltage. You agree that the Information as provided here through an intermediary may not be error-free, accurate or up-to-date and that it is not advice. You have chosen to save the following item to a parts list:. With dimensions of only 3.
The product detailed below complies with the specifications published by RS Components. Typical Input Capacitance Vds.
AOC MOSFET Datasheet pdf – Equivalent. Cross Reference Search
Maximum Drain Source Voltage. Skip to main content. Unlike conventional CSP chip scale packagingthe Micro-DFN eliminates the risk of die chipping by encapsulating the silicon to provide full protection to the die as well as providing excellent moisture isolation.
4pcs/lot SI4810 4810 MOSFET(Metal Oxide Semiconductor Field Effect Transistor)
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Save to an existing parts list Save to a new parts list. Save this item to a 410 parts list. Maximum Continuous Drain Current.
When board space is a key concern, AOC provides a great option to further enhance power density. These cookies are used to gather information about your josfet of the Site to improve your access to the site and increase its usability.
AOC4810 MOSFET. Datasheet pdf. Equivalent
Each In a Tube of Number of Elements per Chip. The products provide ultra-low RSS source-to-source resistance of less than 10mOhms at 10 V gate drive.
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Maximum Continuous Drain Current.
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